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2N2222 Datasheet(PDF) 5 Page - NXP Semiconductors |
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2N2222 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 8 page 1997 May 29 5 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. Switching times (between 10% and 90% levels); see Fig.2 ton turn-on time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − 35 ns td delay time − 10 ns tr rise time − 25 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vi = 9.5 V; T = 500 µs; tp =10 µs; tr =tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = −3.5 V; VCC = 29.5 V. Oscilloscope input impedance Zi =50 Ω. ndbook, full pagewidth RC R2 R1 DUT MLB826 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB Vi VCC Fig.2 Test circuit for switching times. |
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