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STM32H753II Datasheet(PDF) 132 Page - STMicroelectronics

No. de pieza STM32H753II
Descripción Electrónicos  32-bit Arm® Cortex®-M7 480MHz MCUs, 2MB Flash,1MB RAM, 46 com. and analog interfaces, crypto
PDF  361 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H753II Datasheet(HTML) 132 Page - STMicroelectronics

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Electrical characteristics (rev Y)
STM32H753xI
132/360
DS12117 Rev 8
Table 52. Flash memory programming
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
Unit
tprog
Word (266 bits) programming
time
Program/erase parallelism x 8
-
290
580(2)
µs
Program/erase parallelism x 16
-
180
360
Program/erase parallelism x 32
-
130
260
Program/erase parallelism x 64
-
100
200
tERASE128KB Sector (128 KB) erase time
Program/erase parallelism x 8
-
2
4
s
Program/erase parallelism x 16
-
1.8
3.6
Program/erase parallelism x 32
-
1.1
2.2
Program/erase parallelism x 64
-
1
2
tME
Mass erase time
Program/erase parallelism x 8
-
13
26
Program/erase parallelism x 16
-
8
16
Program/erase parallelism x 32
-
6
12
Program/erase parallelism x 64
-
5
10
Vprog
Programming voltage
Program parallelism x 8
1.62
-
3.6
V
Program parallelism x 16
Program parallelism x 32
Program parallelism x 64
1.8
-
3.6
1. Guaranteed by characterization results.
2. The maximum programming time is measured after 10K erase operations.
Table 53. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
NEND
Endurance
TJ = –40 to +125 °C (6 suffix versions)
10
kcycles
tRET
Data retention
1 kcycle at TA = 85 °C
30
Years
10 kcycles at TA = 55 °C
20
1. Guaranteed by characterization results.



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