STM32WB35CCU6ATR datasheet(117/193 Pages) STMICROELECTRONICS

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DS11929 Rev 10

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STM32WB55xx STM32WB35xx

Electrical characteristics

169

6.3.9

Wakeup time from Low-power modes and voltage scaling



transition times

The wakeup times given in Table 51 are the latency between the event and the execution of

the first user instruction.

The device goes in Low-power mode after the WFE (Wait For Event) instruction.

Table 51. Low-power mode wakeup timings(1)

Symbol

Parameter

Conditions

Typ

Max

Unit

tWUSLEEP

Wakeup time from

Sleep mode



to Run mode

-9

No. of

CPU

cycles

tWULPSLEEP

Wakeup time from



Low-power sleep mode

to Low-power run mode

Wakeup in Flash with memory in power-down

during low-power sleep mode (FPDS = 1 in

PWR_CR1) and with clock MSI = 2 MHz

910

tWUSTOP0

Wake up time from

Stop 0 mode



to Run mode in Flash

memory

Range 1

Wakeup clock MSI = 32 MHz

2.38

2.96

µs

Wakeup clock HSI16 = 16 MHz

1.69

2.00

Range 2

Wakeup clock HSI16 = 16 MHz

1.70

2.01

Wakeup clock MSI = 4 MHz

7.43

8.59

Wake up time from

Stop 0 mode



to Run mode in SRAM1

Range 1

Wakeup clock MSI = 32 MHz

2.63

3.00

Wakeup clock HSI16 = 16 MHz

1.80

2.00

Range 2

Wakeup clock HSI16 = 16 MHz

1.82

2.02

Wakeup clock MSI = 4 MHz

7.58

8.70

tWUSTOP1

Wake up time from

Stop 1 mode



to Run in Flash memory



SMPS bypassed

Range 1

Wakeup clock MSI = 32 MHz

4.67

5.56

Wakeup clock HSI16 = 16 MHz

5.09

6.03

Range 2

Wakeup clock HSI16 = 16 MHz

5.08

6.00

Wakeup clock MSI = 4 MHz

8.36

9.28

Wake up time from

Stop 1 mode



to Run in SRAM1



SMPS bypassed

Range 1

Wakeup clock MSI = 32 MHz

4.88

5.55

Wakeup clock HSI16 = 16 MHz

5.29

5.95

Range 2

Wakeup clock HSI16 = 16 MHz

5.28

5.96

Wakeup clock MSI = 4 MHz

8.49

9.30

Wake up time from

Stop 1 mode to



Low-power run mode



in Flash memory

Regulator in

Low-power

mode (LPR = 1

in PWR_CR1)

Wakeup clock MSI = 4 MHz

7.96

9.59

Wake up time from

Stop 1 mode to



Low-power run mode



in SRAM1

8.00

9.47

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