1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Amplifier Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

BC

546

BC

547

BC

548

Unit

Collector – Emitter Voltage

VCEO

65

45

30

Vdc

Collector – Base Voltage

VCBO

80

50

30

Vdc

Emitter – Base Voltage

VEBO

6.0

Vdc

Collector Current — Continuous

IC

100

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watt

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

BC546

(IC = 1.0 mA, IB = 0)

BC547

BC548

V(BR)CEO

65

45

30

—

—

—

—

—

—

V

Collector – Base Breakdown Voltage

BC546

(IC = 100 µAdc)

BC547

BC548

V(BR)CBO

80

50

30

—

—

—

—

—

—

V

Emitter – Base Breakdown Voltage

BC546

(IE = 10 mA, IC = 0)

BC547

BC548

V(BR)EBO

6.0

6.0

6.0

—

—

—

—

—

—

V

Collector Cutoff Current

(VCE = 70 V, VBE = 0)

BC546

(VCE = 50 V, VBE = 0)

BC547

(VCE = 35 V, VBE = 0)

BC548

(VCE = 30 V, TA = 125°C)

BC546/547/548

ICES

—

—

—

—

0.2

0.2

0.2

—

15

15

15

4.0

nA

µA

Order this document

by BC546/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BC546, B

BC547, A, B, C

BC548, A, B, C

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

1

2

3

COLLECTOR

1

2

BASE

3

EMITTER

REV 1