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L9678P Datasheet(PDF) 166 Page - STMicroelectronics

No. de pieza L9678P
Descripción Electrónicos  Automotive user configurable airbag IC
PDF  203 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L9678P Datasheet(HTML) 166 Page - STMicroelectronics

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Electrical characteristics
L9678P, L9678P-S
166/203
DocID029274 Rev 3
16 ILKG_VBATMON_OFF
VBATMON input
leakage
Device OFF
-5
5
µA
17 ILKG_VBATMON_ON
Device ON
Design Info
20
24
30
µA
18 RPD_VBATMON
VBATMON pull-down
resistance
Device ON
VBATMON < 10V
Design Info
125
250
375
kΩ
19 ILKG_VBATMON_TOT
VBATMON total input
leakage
ILKG_VBATMON_ON + RPD_VBATMO
VBATMON = 18V
35
70
105
µA
20
VINGOOD1
VIN input voltage
thresholds
SYS_CTL(VIN_TH_SEL)=0
5
-
5.5
V
21
VINBAD1
SYS_CTL(VIN_TH_SEL)=0
4.5
-
5
V
22
VINGOOD2
SYS_CTL(VIN_TH_SEL)=1
7
-
7.5
V
23
VINBAD2
SYS_CTL(VIN_TH_SEL)=1
6.5
-
7
V
24
VINFASTSLOPE_H
VIN Thresholds used to
change boost regulator
transition time
-9.3
9.8
10.3
V
25
VINFASTSLOPE_L
-9
9.5
10
V
26 VINFASTSLOPE_HYS
-
0.2
0.3
0.4
V
27
ILKG_VIN_OFF
VIN input leakage
Device OFF, VIN = 40V
-10
-
10
µA
28
ILKG_VIN_ON
Device ON, VIN = 12V
-
-
30
mA
29
CVIN
External VIN capacitor
-
1
-
-
-
30
ILKG_VER_OFF
VER input leakage
Device OFF, VER = 40 V
-5
-
5
µA
31
ILKG_VER_ON_L
Device ON
ERBOOST > VER
-5
-
5
µA
32
ILKG_VER_ON_H
Device ON
ERBOOST < VER
--
200
µA
33
VWD_OVERRIDE_th WDT/TM threshold
-
10
12
14
V
34
VWDTDIS_HYST
WDT/TM hysteresis
-
0.2
0.4
0.5
V
35
IPD_WDTDIS
WDT/TM pull-down
Current
VWDTDIS ≤ 5 V
204570
µA
36
ILKG_BAT
Battery line Input
Leakage
Total leakage at RT from VIN,
VBATMON, ERBSTSW, ERBOOST,
BVDD5, VDD5, VDDQ, BVSUP,
VSUP
VBAT = 12 V
Guaranteed by design
--
100
µA
37
Tj
Junction temperature
Design Info
-
-
150
°C
Table 13. Configuration and control DC specifications (continued)
N°
Symbol
Parameter
Condition
Min
Typ
Max Unit



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