Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
E-SWITCH |
N800210
|
213Kb / 1P |
CONTACT RESISTANCE; 50 m2 MAX INITIAL.
|
N800001
|
84Kb / 1P |
CONTACT RESISTANCE; 50 m2 MAX INITIAL.
|
N800002
|
103Kb / 1P |
CONTACT RESISTANCE; 50 m2 MAX INITIAL.
|
NXP Semiconductors |
PDTD123Y
|
132Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 02-16 November 2009 |
PDTD113E
|
131Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓
Rev. 02-16 November 2009 |
PDTB123E
|
138Kb / 10P |
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 02-16 November 2009 |
PDTD113E
|
131Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓
v |
PDTD123Y
|
132Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors R1 = 2.2 k廓, R2 = 10 k廓
Rev. 02-16 November 2009 |
PDTD123E
|
131Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 02-16 November 2009 |
PDTB113Z
|
138Kb / 10P |
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 10 k廓
Rev. 02-16 November 2009 |