General Description

This  P-Channel  Logic Level  MOSFET is produced using Fairchild Semiconductor  advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for  low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

·  –2A, –30 V.  RDS(ON)= 80 mW@ VGS= –10 V

                    RDS(ON)= 125mW@ VGS= –4.5 V

·  Low gate charge (6.2 nC typical)

·  High performance trench technologyfor extremely low RDS(ON).

·  High power version of industry Standard SOT-23 package.Identical pin-out to SOT-23 with 30%

higher power handling capability.