Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
NXP Semiconductors |
PDTB123E
|
138Kb / 10P |
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 02-16 November 2009 |
PDTD123T
|
129Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = open
Rev. 03-16 November 2009 |
PDTD123T
|
129Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors R1 = 2.2 k廓, R2 = open
Rev. 03-16 November 2009 |
PDTB123Y
|
138Kb / 10P |
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 02-16 November 2009 |
PDTD123E
|
131Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 02-16 November 2009 |
PDTD123Y
|
132Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 02-16 November 2009 |
PDTD123Y
|
132Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors R1 = 2.2 k廓, R2 = 10 k廓
Rev. 02-16 November 2009 |
PDTD123T
|
67Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = open
Rev. 02-21 July 2005 |
PDTA123E
|
189Kb / 14P |
PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
2004 Aug 02 |
PDTB113Z
|
138Kb / 10P |
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 10 k廓
Rev. 02-16 November 2009 |