Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Semikron International |
SKM50GB123D
|
2Mb / 6P |
SEMITRANS짰 M IGBT Modules
|
Kersemi Electronic Co.,... |
KSMU10N20C
|
2Mb / 6P |
N-Channel MOSFET 200 V, 7.8 A, 360 m廓
|
Fairchild Semiconductor |
FQU12N20TU
|
862Kb / 9P |
N-Channel QFET짰 MOSFET 200 V, 9 A, 280 m廓
|
FDD18N20LZ
|
1Mb / 8P |
N-Channel UniFETTM MOSFET 200 V, 16 A, 125 m廓
|
FQD10N20LTM
|
765Kb / 8P |
N-Channel QFET짰 MOSFET 200 V, 7.6 A, 360 m廓
|
FQB19N20LTM
|
868Kb / 8P |
N-Channel QFET짰 MOSFET 200 V, 21 A, 140 m廓
|
FDMC89521L
|
310Kb / 7P |
Dual N-Channel PowerTrench짰 MOSFET 60 V, 8.2 A, 17 m廓
|
FDMS8018
|
318Kb / 7P |
N-Channel PowerTrench짰 MOSFET 30 V, 120 A, 1.8 m廓
|
ON Semiconductor |
NTTFS5811NL
|
258Kb / 6P |
Power MOSFET 40 V, 53 A, 6.4 m廓
May, 2010 -- Rev. 1 |
NTD6416AN
|
235Kb / 8P |
MOSFET – Power, N-Channel 100 V, 17 A, 81 m
April, 2020 - Rev. 4 |