Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
IXYS Corporation
|
IXKC15N60C5 |
119Kb/4P |
Electrically isolated back surface Electrically isolated back surface |
IXGC16N60C2 |
541Kb/2P |
Electrically Isolated Back Surface |
IXGC16N60B2 |
92Kb/2P |
Electrically Isolated Back Surface |
DSS20-01AC |
121Kb/4P |
Electrically Isolated Back Surface |
IXUC100N055 |
575Kb/2P |
Electrically Isolated Back Surface |
IXFR38N80Q2 |
568Kb/5P |
Electrically Isolated Back Surface |
DSEE8-06CC |
65Kb/2P |
Electrically Isolated Back Surface |
IXGR24N60C |
56Kb/2P |
HiPerFASTTM IGBT ISOPLUS247TM (Electrically Isolated Back Surface) |
IXGR60N60C2 |
612Kb/6P |
Lightspeed 2TM Series (Electrically Isolated Back Surface) |
DSS17-06CR |
42Kb/2P |
HiPerDyn-TM Schottky Diode (Electrically Isolated Back Surface) |
DSEE6-06CC |
509Kb/2P |
HiPerDynFREDTM Epitaxial Diode ISOPLUS220 Electrically Isolated Back Surface |
DESC29-06AC |
74Kb/2P |
HiPerFRED Epitaxial Diode ISOPLUS220 Electrically Isolated Back Surface |
IXFR21N100Q |
38Kb/2P |
HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) |
DSEP30-12CR |
19Kb/1P |
HiPerDynFRED with soft recovery (Electrically Isolated Back Surface) |
L373 |
19Kb/1P |
HiPerDynFRED with soft recovery (Electrically Isolated Back Surface) |
IXFR26N50Q |
79Kb/2P |
HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface) |
MKE11R600DCGFC |
260Kb/6P |
Electrically isolated back surface 2500 V electrical isolation |
IXFR24N100 |
36Kb/2P |
HiPerFETTM Power MOSFETs ISOPLUS247TM(Electrically Isolated Back Surface) |
IXFR26N50 |
34Kb/2P |
HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface) |
99161 |
514Kb/6P |
B2-Class High Speed IGBTs (Electrically Isolated Back Surface) |