GALLIUM Datasheet(PDF) - K3640 - KODENSHI

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
KODENSHI_AUK CORP.	K3640	110Kb/3P	Photocoupler(These Photocouplers cosist of two Gallium Arsenide Infrared Emitting)
KODENSHI_AUK CORP.	PC-17L1	288Kb/3P	Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
List of Unclassifed Man...	CLE435	111Kb/1P	Red LED, Aluminum Gallium Arsenide Dome Lens Can, Hermetically Sealed
Tyco Electronics	ML46580S-992	463Kb/4P	High Reliability Semiconductor . Beam Lead Gallium Arsenide Tuning Varactor Diode
KODENSHI_AUK CORP.	K4N26	699Kb/3P	Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
	K4N27	203Kb/3P	Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
	K4N29	237Kb/3P	Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)
	K4N38	191Kb/3P	Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
	K201	140Kb/3P	Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
	K3610	193Kb/3P	Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
	KPC514	83Kb/3P	Photocoupler(These Photocouplers cosist of two Gallium Arsenide Infrared Emitting)
Nexperia B.V. All right...	GAN039-650NBBA	301Kb/10P	650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package 19 April 2021
Nexperia B.V. All right...	GAN039-650NTBA	284Kb/10P	650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package 19 April 2021
Gilway Technical Lamp	GHB-0805DU-Y	101Kb/4P	These chip-type LEDs utilize Aluminum Indium Gallium Phosphide (AlInGaP) material technology.
Nexperia B.V. All right...	GAN039-650NBB	301Kb/10P	650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package 19 April 2021
Motorola, Inc	MRFG35003MT1	340Kb/8P	The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
Nexperia B.V. All right...	GAN039-650NTB	285Kb/10P	650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package 19 April 2021
Nexperia B.V. All right...	GAN041-650WSB	315Kb/12P	650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package 12 January 2021
M/A-COM Technology Solu...	AG318	214Kb/5P	Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
Kingbright Corporation	W934GD5V	84Kb/3P	THE GREEN SOURCE COLOR DEVICES ARE MADE WITH GALLIUM PHOSPHIDE GREEN LIGHT EMITTING DIODE

GALLIUM Datasheet, PDF

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