| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |

Nexperia B.V. All right...
|
PMEG060V030EPE |
255Kb/11P |
60 V, 3 A low VF Schottky barrier rectifier 19 July 2022 |
| MJD31C |
230Kb/11P |
100 V, 3 A NPN high power bipolar transistor 16 September 2020 |
| NXB0104 |
350Kb/23P |
Dual supply translating transceiver; auto direction sensing; 3-state Rev. 3 - 13 November 2020 |
| 74ALVT16827 |
201Kb/14P |
20-bit buffer/line driver; non-inverting; 3-state Rev. 4 - 24 January 2018 |
| 74ALVCH16827 |
189Kb/13P |
20-bit buffer/line driver, non-inverting; 3-state Rev. 3 - 6 April 2018 |
| MJD31CH-Q |
226Kb/11P |
100 V, 3 A NPN high power bipolar transistor 18 May 2021 |
| 2PD2150 |
750Kb/13P |
20 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 - 2 January 2007 |
| PMEG040V030EPE-Q |
263Kb/11P |
40 V, 3 A low VF Schottky barrier rectifier 24 October 2022 |
| PMEG4030EP-Q |
255Kb/12P |
40 V, 3 A low VF Schottky barrier rectifier 20 February 2023 |
| PMEG6030ETP-Q |
260Kb/13P |
High-temperature 60 V, 3 A Schottky barrier rectifier 20 February 2023 |
| 74LVT573 |
264Kb/15P |
3.3 V octal D-type transparent latch; 3-state Rev. 9 - 30 July 2021 |
| PMEG3030EP |
275Kb/13P |
30 V, 3 A low VF Schottky barrier rectifier 1 April 2023 |
| MJD31CA |
231Kb/11P |
100 V, 3 A NPN high power bipolar transistor 23 November 2020 |
| MJD32C |
230Kb/11P |
100 V, 3 A PNP high power bipolar transistor 30 September 2019 |
| NXB0104-Q100 |
349Kb/24P |
Dual supply translating transceiver; auto direction sensing; 3-state Rev. 4 - 2 May 2022 |
| PMEG030V030EPE-Q |
261Kb/11P |
30 V, 3 A low VF Schottky barrier rectifier 15 July 2022 |
| PBSS305ND |
278Kb/16P |
100 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 - 7 December 2007 |
| PBSS4330PA |
707Kb/16P |
30 V, 3 A NPN low VCEsat (BISS) transistor 7 April 2015 |
| 74AVC16835A |
236Kb/15P |
18-bit registered driver with Dynamic Controlled Outputs 3-state |
| PMEG6030ELP |
259Kb/14P |
60 V, 3 A low leakage current Schottky barrier rectifier |