NPN GENERAL PURPOSE TRANSISTOR Datasheet(PDF) - D965 - Stanson Technology

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NPN GENERAL PURPOSE TRANSISTOR Datasheet, PDF

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Palabra clave buscada : 'NPN GENERAL PURPOSE TRANSISTOR ' - Total: 47 (1/3) Pages

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Stanson Technology	D965	80Kb/1P	NPN TRANSISTOR
	8050S	89Kb/1P	NPN TRANSISTOR
	D2152	79Kb/1P	NPN TRANSISTOR
	8050	90Kb/1P	NPN TRANSISTOR
	C945	80Kb/1P	NPN TRANSISTOR
	D2150	80Kb/1P	NPN TRANSISTOR
	8550S	89Kb/1P	PNP TRANSISTOR
	B1424	80Kb/1P	PNP TRANSISTOR
	D882	22Kb/1P	PNP TRANSISTOR
	8550	90Kb/1P	PNP TRANSISTOR
	A733	80Kb/1P	PNP TRANSISTOR
	B772	22Kb/1P	PNP TRANSISTOR
	B1426	79Kb/1P	PNP TRANSISTOR
	STC6332	421Kb/9P	The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
	ST2319SRG	229Kb/8P	ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	ST2318SRG	221Kb/7P	ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	STN1810	966Kb/7P	STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4392	383Kb/7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4438	269Kb/6P	STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4480	742Kb/6P	STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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