NPN GENERAL PURPOSE TRANSISTOR Datasheet(PDF) - HM13003 - Shenzhen Huazhimei Semiconductor Co., Ltd

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NPN GENERAL PURPOSE TRANSISTOR Datasheet, PDF

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Palabra clave buscada : 'NPN GENERAL PURPOSE TRANSISTOR ' - Total: 12 (1/1) Pages

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Shenzhen Huazhimei Semi...	HM13003	316Kb/6P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
	HMG60N60A	902Kb/7P	600V insulated gate bipolar transistor
	HM6604BWKR	1Mb/8P	Complementary Enhancement Mode Field Effect Transistor
	HMG40N60A	750Kb/5P	40A, 600V insulated gate bipolar transistor
	HMG20N60A	633Kb/5P	20A, 600V insulated gate bipolar transistor
	BSS84KR	330Kb/4P	P-Channel Enhancement Mode Field Effect Transistor
	BSS8402DW	315Kb/6P	Complementary Pair Enhancement Mode Field Effect Transistor
	HM2301BWKR	411Kb/6P	Dual P-Channel Enhancement Mode Field Effect Transistor
	HM4618SP	665Kb/6P	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
	HM603BK	938Kb/8P	N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
	HM609BK	2Mb/8P	N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
	HM1P10MR	763Kb/5P	P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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