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FSL9130D3 Datasheet with Chat AI
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  • Part No.FSL9130D3
    ManufacturerINTERSIL
    Size45 Kbytes
    Pages8 pages
    Description5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
    Datasheet Summary with AI

    1. Overview & Device Type

    ️· The document relates to Intersil Power Transistors, specifically the FSL9130D and FSL9130R. It appears to be a detailed specification sheet and quality assurance/screening documentation package.

    2. Dimensions (with Metric Conversion)

    ️· The final page details dimensions, providing both inch and millimeter measurements. The table describes various features (A, Øb, ØD, ØD1, e, e1, e2, h, j, k, L, P) with associated minimum and maximum values.

    3. Screening & Testing Categories & Details

    The bulk of the document outlines different screening and testing procedures. It's divided into three primary categories, each with multiple levels (Standard and Optional). This indicates different levels of quality and traceability.

    A. Rad Hard TXV Equivalent

    ️· Standard Data Package: Includes a certificate of compliance, flow chart, preconditioning data sheet, and Group A, B, C and D Attribute Data Sheets.
    ️· Optional Data Package: Adds details such as Lot Traveler, pre/post burn-in data, bond strength data, and Rad Read/Record Data.
    ️· Notes: Group A - attributes include static tests.

    B. Class S – Equivalents

    ️· Standard Data Package: This includes a certificate of compliance, assembly flow chart, SEM photos, and Group A, B, C, and D data sheets.
    ️· Optional Data Package: Adds a lot traveler, X-ray reports, high-temperature reverse bias (HTRB) data & reports, and pre/post radiation data.
    ️· Notes: Class S emphasizes more stringent quality control.

    C. Detailed Testing Methods (Examples from Throughout the Document)

    ️· Hi-Temp Gate Stress (HTRB): Test conducted at a specific voltage and temperature for a defined period (e.g., 96 hours) to evaluate gate stability.
    ️· Hi-Temp Drain Stress: Similar to HTRB but applied to the drain.
    ️· Intermittent Operating Life: Testing focused on life performance under intermittent usage patterns.
    ️· Bond Strength Data: Measures the strength of solder bonds.
    ️· Safe Operating Area (SOA): Assesses the device’s ability to operate within specified voltage and current limits.
    ️· Unclamped Inductive Switching (IAS): Tests device performance under switching conditions to prevent damage.
    ️· Thermal Response & Impedance: Measures how quickly the device dissipates heat.
    ️· PDA (Power Device Aging): Assessment of device degradation under power stress.
    ️· Group A, B, C & D: Generic identifiers for attributes data sheets within the different screening categories.
    ️· Preconditioning: Initial processing to stabilize the device before main testing.
    ️· RAD (Radiation): Tests related to device performance under radiation exposure.
    ️· Serialization Records: Tracking of individual device serial numbers for traceability.

    4. Notable Abbreviations

    ️· TXV: Likely an internal designation or reference to a specific testing standard.
    ️· RAD: Radiation testing.
    ️· HTRB: High-Temperature Reverse Bias.
    ️· SEM: Scanning Electron Microscope
    ️· IA: Initial Attributes.
    ️· HT: High Temp

    Key Takeaways & Potential Uses of the Document:

    ️· Quality Assurance: This is a vital document for quality control, traceability, and verification that devices meet specific performance and reliability standards.
    ️· Manufacturing: Provides guidance for assembly and testing processes.
    ️· Design Engineering: Useful for engineers selecting these transistors for high-reliability applications (e.g., aerospace, military, industrial).
    ️· Supplier Qualification: Used by buyers to evaluate the manufacturing processes and quality systems of potential suppliers.

    1. Overview & Device Type

    ️· The document relates to Intersil Power Transistors, specifically the FSL9130D and FSL9130R. It appears to be a detailed specification sheet and quality assurance/screening documentation package.

    2. Dimensions (with Metric Conversion)

    ️· The final page details dimensions, providing both inch and millimeter measurements. The table describes various features (A, Øb, ØD, ØD1, e, e1, e2, h, j, k, L, P) with associated minimum and maximum values.

    3. Screening & Testing Categories & Details

    The bulk of the document outlines different screening and testing procedures. It's divided into three primary categories, each with multiple levels (Standard and Optional). This indicates different levels of quality and traceability.

    A. Rad Hard TXV Equivalent

    ️· Standard Data Package: Includes a certificate of compliance, flow chart, preconditioning data sheet, and Group A, B, C and D Attribute Data Sheets.
    ️· Optional Data Package: Adds details such as Lot Traveler, pre/post burn-in data, bond strength data, and Rad Read/Record Data.
    ️· Notes: Group A - attributes include static tests.

    B. Class S – Equivalents

    ️· Standard Data Package: This includes a certificate of compliance, assembly flow chart, SEM photos, and Group A, B, C, and D data sheets.
    ️· Optional Data Package: Adds a lot traveler, X-ray reports, high-temperature reverse bias (HTRB) data & reports, and pre/post radiation data.
    ️· Notes: Class S emphasizes more stringent quality control.

    C. Detailed Testing Methods (Examples from Throughout the Document)

    ️· Hi-Temp Gate Stress (HTRB): Test conducted at a specific voltage and temperature for a defined period (e.g., 96 hours) to evaluate gate stability.
    ️· Hi-Temp Drain Stress: Similar to HTRB but applied to the drain.
    ️· Intermittent Operating Life: Testing focused on life performance under intermittent usage patterns.
    ️· Bond Strength Data: Measures the strength of solder bonds.
    ️· Safe Operating Area (SOA): Assesses the device’s ability to operate within specified voltage and current limits.
    ️· Unclamped Inductive Switching (IAS): Tests device performance under switching conditions to prevent damage.
    ️· Thermal Response & Impedance: Measures how quickly the device dissipates heat.
    ️· PDA (Power Device Aging): Assessment of device degradation under power stress.
    ️· Group A, B, C & D: Generic identifiers for attributes data sheets within the different screening categories.
    ️· Preconditioning: Initial processing to stabilize the device before main testing.
    ️· RAD (Radiation): Tests related to device performance under radiation exposure.
    ️· Serialization Records: Tracking of individual device serial numbers for traceability.

    4. Notable Abbreviations

    ️· TXV: Likely an internal designation or reference to a specific testing standard.
    ️· RAD: Radiation testing.
    ️· HTRB: High-Temperature Reverse Bias.
    ️· SEM: Scanning Electron Microscope
    ️· IA: Initial Attributes.
    ️· HT: High Temp

    Key Takeaways & Potential Uses of the Document:

    ️· Quality Assurance: This is a vital document for quality control, traceability, and verification that devices meet specific performance and reliability standards.
    ️· Manufacturing: Provides guidance for assembly and testing processes.
    ️· Design Engineering: Useful for engineers selecting these transistors for high-reliability applications (e.g., aerospace, military, industrial).
    ️· Supplier Qualification: Used by buyers to evaluate the manufacturing processes and quality systems of potential suppliers.

    Part No.FSL9130D3
    ManufacturerINTERSIL
    Size45 Kbytes
    Pages8 pages
    Description5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
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