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Hello, Please ask a question about BUV46 Datasheet
# Example questions:
➢ What is the maximum collector current (dc) that the buv46a transistor can handle?
➢ How does the thermal resistance (rth j-case) affect the power dissipation capability of this transistor?
➢ What is the typical collector-emitter saturation voltage (vcesat-1) for the buv46 when the collector current is 5a and the base current is 0.5a?
# Silicon NPN Power Transistors BUV46 BUV46A
## Description
· TO-220C package
· High voltage
· Fast switching
## Applications
· General purpose switching
· Switch mode power supplies
· Electronic ballasts for fluorescent lighting
## Pinning
· 1: Base
· 2: Collector (connected to mounting base)
· 3: Emitter
## Absolute Maximum Ratings (Tc=25℃)
· VCBO (BUV46): 850V
· VCBO (BUV46A): 1000V
· VCEO (BUV46): 400V
· VCEO (BUV46A): 450V
· VEBO: 7V
· IC: 5A
· IB: 3A
· Ptot: 70W
· Tj: 150℃
· Tstg: -65~150℃
## Thermal Characteristics
· Rth j-case: 1.76 ℃/W
## Characteristics (Tj=25℃ unless otherwise specified)
· VCEO(SUS) (BUV46): 400V (IC=0.1A, IB=0)
· VCEO(SUS) (BUV46A): 450V (IC=0.1A, IB=0)
· VCEsat-1 (BUV46): 1.5V (IC=2.5A, IB=0.5A)
· VCEsat-1 (BUV46A): (IC=2A, IB=0.4A)
· VCEsat-2 (BUV46): 5.0V (IC=3.5A, IB=0.7A)
· VCEsat-2 (BUV46A): (IC=3A, IB=0.6A)
· VBEsat (BUV46): 1.3V (IC=2.5A, IB=0.5A)
· VBEsat (BUV46A): (IC=2A, IB=0.4A)
· ICER: 0.1-1.0mA (VCE=VCEX, RBE=10 Ω, TC=125℃)
· ICEX: 0.3-2.0mA (VCE=VCEX, VBE=-2.5V, TC=125℃)
· IEBO: 1.0mA (VEB=7V, IC=0)
· ton: 1.0μs (BUV46: IC=2.5A, IB1=-IB2=0.5A, VCC=150V; BUV46A: IC=2A, IB1=-IB2=0.4A, VCC=150V)
· ts: 3.0μs
· tf: 0.8μs
## Package Outline
· Fig. 2 (unindicated tolerance: 0.1mm)
# Silicon NPN Power Transistors BUV46 BUV46A
## Description
· TO-220C package
· High voltage
· Fast switching
## Applications
· General purpose switching
· Switch mode power supplies
· Electronic ballasts for fluorescent lighting
## Pinning
· 1: Base
· 2: Collector (connected to mounting base)
· 3: Emitter
## Absolute Maximum Ratings (Tc=25℃)
· VCBO (BUV46): 850V
· VCBO (BUV46A): 1000V
· VCEO (BUV46): 400V
· VCEO (BUV46A): 450V
· VEBO: 7V
· IC: 5A
· IB: 3A
· Ptot: 70W
· Tj: 150℃
· Tstg: -65~150℃
## Thermal Characteristics
· Rth j-case: 1.76 ℃/W
## Characteristics (Tj=25℃ unless otherwise specified)
· VCEO(SUS) (BUV46): 400V (IC=0.1A, IB=0)
· VCEO(SUS) (BUV46A): 450V (IC=0.1A, IB=0)
· VCEsat-1 (BUV46): 1.5V (IC=2.5A, IB=0.5A)
· VCEsat-1 (BUV46A): (IC=2A, IB=0.4A)
· VCEsat-2 (BUV46): 5.0V (IC=3.5A, IB=0.7A)
· VCEsat-2 (BUV46A): (IC=3A, IB=0.6A)
· VBEsat (BUV46): 1.3V (IC=2.5A, IB=0.5A)
· VBEsat (BUV46A): (IC=2A, IB=0.4A)
· ICER: 0.1-1.0mA (VCE=VCEX, RBE=10 Ω, TC=125℃)
· ICEX: 0.3-2.0mA (VCE=VCEX, VBE=-2.5V, TC=125℃)
· IEBO: 1.0mA (VEB=7V, IC=0)
· ton: 1.0μs (BUV46: IC=2.5A, IB1=-IB2=0.5A, VCC=150V; BUV46A: IC=2A, IB1=-IB2=0.4A, VCC=150V)
· ts: 3.0μs
· tf: 0.8μs
## Package Outline
· Fig. 2 (unindicated tolerance: 0.1mm)
| Part No. | BUV46 |
| Manufacturer | ISC |
| Size | 140 Kbytes |
| Pages | 3 pages |
| Description | Silicon NPN Power Transistors |
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