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  • Part No.BUV46
    ManufacturerISC
    Size140 Kbytes
    Pages3 pages
    DescriptionSilicon NPN Power Transistors
    Datasheet Summary with AI

    # Silicon NPN Power Transistors BUV46 BUV46A

    ## Description
    · TO-220C package
    · High voltage
    · Fast switching

    ## Applications
    · General purpose switching
    · Switch mode power supplies
    · Electronic ballasts for fluorescent lighting

    ## Pinning
    · 1: Base
    · 2: Collector (connected to mounting base)
    · 3: Emitter

    ## Absolute Maximum Ratings (Tc=25℃)
    · VCBO (BUV46): 850V
    · VCBO (BUV46A): 1000V
    · VCEO (BUV46): 400V
    · VCEO (BUV46A): 450V
    · VEBO: 7V
    · IC: 5A
    · IB: 3A
    · Ptot: 70W
    · Tj: 150℃
    · Tstg: -65~150℃

    ## Thermal Characteristics
    · Rth j-case: 1.76 ℃/W

    ## Characteristics (Tj=25℃ unless otherwise specified)
    · VCEO(SUS) (BUV46): 400V (IC=0.1A, IB=0)
    · VCEO(SUS) (BUV46A): 450V (IC=0.1A, IB=0)
    · VCEsat-1 (BUV46): 1.5V (IC=2.5A, IB=0.5A)
    · VCEsat-1 (BUV46A): (IC=2A, IB=0.4A)
    · VCEsat-2 (BUV46): 5.0V (IC=3.5A, IB=0.7A)
    · VCEsat-2 (BUV46A): (IC=3A, IB=0.6A)
    · VBEsat (BUV46): 1.3V (IC=2.5A, IB=0.5A)
    · VBEsat (BUV46A): (IC=2A, IB=0.4A)
    · ICER: 0.1-1.0mA (VCE=VCEX, RBE=10 Ω, TC=125℃)
    · ICEX: 0.3-2.0mA (VCE=VCEX, VBE=-2.5V, TC=125℃)
    · IEBO: 1.0mA (VEB=7V, IC=0)
    · ton: 1.0μs (BUV46: IC=2.5A, IB1=-IB2=0.5A, VCC=150V; BUV46A: IC=2A, IB1=-IB2=0.4A, VCC=150V)
    · ts: 3.0μs
    · tf: 0.8μs

    ## Package Outline
    · Fig. 2 (unindicated tolerance: 0.1mm)

    # Silicon NPN Power Transistors BUV46 BUV46A

    ## Description
    · TO-220C package
    · High voltage
    · Fast switching

    ## Applications
    · General purpose switching
    · Switch mode power supplies
    · Electronic ballasts for fluorescent lighting

    ## Pinning
    · 1: Base
    · 2: Collector (connected to mounting base)
    · 3: Emitter

    ## Absolute Maximum Ratings (Tc=25℃)
    · VCBO (BUV46): 850V
    · VCBO (BUV46A): 1000V
    · VCEO (BUV46): 400V
    · VCEO (BUV46A): 450V
    · VEBO: 7V
    · IC: 5A
    · IB: 3A
    · Ptot: 70W
    · Tj: 150℃
    · Tstg: -65~150℃

    ## Thermal Characteristics
    · Rth j-case: 1.76 ℃/W

    ## Characteristics (Tj=25℃ unless otherwise specified)
    · VCEO(SUS) (BUV46): 400V (IC=0.1A, IB=0)
    · VCEO(SUS) (BUV46A): 450V (IC=0.1A, IB=0)
    · VCEsat-1 (BUV46): 1.5V (IC=2.5A, IB=0.5A)
    · VCEsat-1 (BUV46A): (IC=2A, IB=0.4A)
    · VCEsat-2 (BUV46): 5.0V (IC=3.5A, IB=0.7A)
    · VCEsat-2 (BUV46A): (IC=3A, IB=0.6A)
    · VBEsat (BUV46): 1.3V (IC=2.5A, IB=0.5A)
    · VBEsat (BUV46A): (IC=2A, IB=0.4A)
    · ICER: 0.1-1.0mA (VCE=VCEX, RBE=10 Ω, TC=125℃)
    · ICEX: 0.3-2.0mA (VCE=VCEX, VBE=-2.5V, TC=125℃)
    · IEBO: 1.0mA (VEB=7V, IC=0)
    · ton: 1.0μs (BUV46: IC=2.5A, IB1=-IB2=0.5A, VCC=150V; BUV46A: IC=2A, IB1=-IB2=0.4A, VCC=150V)
    · ts: 3.0μs
    · tf: 0.8μs

    ## Package Outline
    · Fig. 2 (unindicated tolerance: 0.1mm)

    Part No.BUV46
    ManufacturerISC
    Size140 Kbytes
    Pages3 pages
    DescriptionSilicon NPN Power Transistors
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