# isc Silicon NPN Darlington Power Transistor 2SD864

## Description

· High DC Current Gain: hFE = 1000 (Min) @ IC = 1.5A
· Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V (Min)
· Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V (Max) @ IC = 1.5A
· Complement to Type 2SB765

## Applications

· Medium speed and power switching applications

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	120	V
VCEO	Collector-Emitter Voltage	120	V
VEBO	Emitter-Base Voltage	7	V
IC	Collector Current-Continuous	3	A
ICM	Collector Current-Peak	6	A
PC	Collector Power Dissipation (TC=25℃)	30	W
Tj	Junction Temperature	150	℃
Tstg	Storage Temperature Range	-55~150	℃

## Electrical Characteristics (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V(BR)CEO	Collector-Emitter Breakdown Voltage	IC= 25mA, RBE= ∞	120			V
V(BR)EBO	Emitter-Base Breakdown Voltage	IE= 50mA, IC= 0	7			V
VCE(sat)-1	Collector-Emitter Saturation Voltage	IC= 1.5A, IB= -3mA			1.5	V
VCE(sat)-2	Collector-Emitter Saturation Voltage	IC= 3A, IB= -30mA			3.0	V
VBE(sat)-1	Base-Emitter Saturation Voltage	IC= 1.5A, IB= -3mA			2.0	V
VBE(sat)-2	Base-Emitter Saturation Voltage	IC= 3A, IB= -30mA			3.5	V
ICBO	Collector Cutoff Current	VCB= 120V, IE= 0			100	μA
ICEO	Collector Cutoff Current	VCE= 100V, RBE= ∞			10	μA
hFE	DC Current Gain	IC= 1.5A; VCE= 3V	1000		20000

## Switching Times

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
ton	Turn-on Time	IC= 1.5A; IB1= -IB2= 3mA	0.5	μs
tstg	Storage Time	Storage Time	4.5	μs
tf	Fall Time	Fall Time	1.1	μs

## Website

· www.iscsemi.cn