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Hello, Please ask a question about 2SC2883-O Datasheet
# Example questions:
➢ What is the typical forward current transfer ratio (hfe) when the collector current (ic) is 0.5adc and the collector-emitter voltage (vce) is 0vdc?
➢ What is the packing type and quantity for the 2sc2883-tp device?
➢ What is the maximum collector-emitter voltage (vceo) for the 2sc2883 transistor?
1. General Information:
️· Product: 2SC2883 Transistor
️· Manufacturer: Micro Commercial Components
️· Website: [www.mccsemi.com](http://www.mccsemi.com)
️· Revision: A
️· Date: 2011/01/01
️· Pages: 4
2. Key Features/Specifications:
️· Type: NPN Bipolar Junction Transistor (BJT)
️· Maximum Ratings:
- VCEO (Collector-Emitter Voltage): 30V
- VCBO (Collector-Base Voltage): 30V
- VEBO (Emitter-Base Voltage): 5.0V
- IC (Collector Current): 1500mA (1.5A)
- PC (Collector Power Dissipation): 500mW
- TJ (Junction Temperature): 150°C
- TSTG (Storage Temperature): -55°C to +150°C
️· Electrical Characteristics (at 25°C unless otherwise specified):
- hFE (DC Current Gain): Varies by rank:
■ O Rank: 100-200
■ Y Rank: 160-320
- VCE(sat) (Collector-Emitter Saturation Voltage): ≤ 2.0V
- VBE (Base-Emitter Voltage): ≤ 1.0V
- fT (Transition Frequency): ≥ 120 MHz
- Cob (Collector Output Capacitance): ≤ 40pF
️· Marking: The transistor's rank is indicated by a marking:
- GO: O Rank
- GY: Y Rank
3. Packaging Information:
️· Part Number - TP: Tape and Reel; 1000 pieces per reel.
4. Notes and Disclaimers:
️· The document includes standard disclaimers about product specifications being subject to change without notice and a recommendation to review the latest datasheet before use.
Important Observations:
️· Rankings: The 2SC2883 is manufactured in different ranks (O and Y) which denote variations in the current gain (hFE).
️· Datasheet: This document is a datasheet, providing technical details necessary for designing and implementing circuits using this specific transistor.
1. General Information:
️· Product: 2SC2883 Transistor
️· Manufacturer: Micro Commercial Components
️· Website: [www.mccsemi.com](http://www.mccsemi.com)
️· Revision: A
️· Date: 2011/01/01
️· Pages: 4
2. Key Features/Specifications:
️· Type: NPN Bipolar Junction Transistor (BJT)
️· Maximum Ratings:
- VCEO (Collector-Emitter Voltage): 30V
- VCBO (Collector-Base Voltage): 30V
- VEBO (Emitter-Base Voltage): 5.0V
- IC (Collector Current): 1500mA (1.5A)
- PC (Collector Power Dissipation): 500mW
- TJ (Junction Temperature): 150°C
- TSTG (Storage Temperature): -55°C to +150°C
️· Electrical Characteristics (at 25°C unless otherwise specified):
- hFE (DC Current Gain): Varies by rank:
■ O Rank: 100-200
■ Y Rank: 160-320
- VCE(sat) (Collector-Emitter Saturation Voltage): ≤ 2.0V
- VBE (Base-Emitter Voltage): ≤ 1.0V
- fT (Transition Frequency): ≥ 120 MHz
- Cob (Collector Output Capacitance): ≤ 40pF
️· Marking: The transistor's rank is indicated by a marking:
- GO: O Rank
- GY: Y Rank
3. Packaging Information:
️· Part Number - TP: Tape and Reel; 1000 pieces per reel.
4. Notes and Disclaimers:
️· The document includes standard disclaimers about product specifications being subject to change without notice and a recommendation to review the latest datasheet before use.
Important Observations:
️· Rankings: The 2SC2883 is manufactured in different ranks (O and Y) which denote variations in the current gain (hFE).
️· Datasheet: This document is a datasheet, providing technical details necessary for designing and implementing circuits using this specific transistor.
| Part No. | 2SC2883-O |
| Manufacturer | MCC |
| Size | 440 Kbytes |
| Pages | 4 pages |
| Description | NPN Silicon Power Transistors |
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