# Silicon NPN Power Transistor 2N6322

## Description
· TO-3 package
· High current and high power capability
· Low collector saturation voltage

## Applications
· High current, high power applications

## Pinning
· Pin 1: Base
· Pin 2: Emitter
· Pin 3: Collector

## Absolute Maximum Ratings (Ta=25℃)
· VCBO (Collector-Base Voltage): 300V
· VCEO (Collector-Emitter Voltage): 200V
· VEBO (Emitter-Base Voltage): 5V
· IC (Collector Current): 30A
· IB (Base Current): 10A
· PD (Total Power Dissipation): 200W
· Tj (Junction Temperature): 200℃
· Tstg (Storage Temperature): -65~200℃

## Thermal Characteristics
· Rth j-c (Thermal Resistance Junction to Case): 0.5 ℃/W

## Electrical Characteristics (Tj=25℃ unless otherwise specified)
· V(BR)CEO (Collector-Emitter Breakdown Voltage): 200V
· V(BR)CBO (Collector-Base Breakdown Voltage): 300V
· V(BR)EBO (Emitter-Base Breakdown Voltage): 5V
· VCEsat-1 (Collector-Emitter Saturation Voltage): 1.5V (IC=20A, IB=2A)
· VCEsat-2 (Collector-Emitter Saturation Voltage): 3.0V (IC=30A, IB=6A)
· VBE (Base-Emitter Voltage): 2.5V (IC=30A, VCE=5V)
· ICEO (Collector Cut-off Current): 2.0mA (VCE=100V, IB=0)
· ICES (Collector Cut-off Current): 20μA (VCE=300V, VBE=0)
· IEBO (Emitter Cut-off Current): 20μA (VEB=5V, IC=0)
· hFE-1 (DC Current Gain): 40-150 (IC=5A, VCE=5V)
· hFE-2 (DC Current Gain): 12 (IC=20A, VCE=5V)
· hFE-3 (DC Current Gain): 6 (IC=30A, VCE=5V)
· fT (Transition Frequency): 10 MHz (IC=1A, VCE=10V)

## Package Outline
· Refers to Fig. 2, dimensions with tolerance ±0.10mm.