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IRFE9130 Datasheet with Chat AI
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  • Part No.IRFE9130
    ManufacturerIRF
    Size203 Kbytes
    Pages7 pages
    DescriptionREPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
    Datasheet Summary with AI

    1. General Description & Key Features:

    ️· Device Type: N-Channel MOSFET
    ️· Voltage Rating: VDS (Drain-Source Voltage) = 200V
    ️· Current Rating: ID (Continuous Drain Current) = 7.5A (at 25°C)
    ️· Power Dissipation: Pd (Power Dissipation) = 75W (at TA = 100°C)
    ️· Operating Temperature: -40°C to 150°C (junction temperature)
    ️· Package: LCC-18 (See package outline at the end)
    ️· Application: Suitable for a wide range of applications, including switching power supplies, motor control, and DC-DC converters.
    ️· Key Benefit: High voltage and current capability with relatively low on-resistance (RDS(on)).

    2. Electrical Characteristics (Important Values):

    ️· RDS(on) (Drain-Source On-Resistance): Typically 0.45 Ohms (VGS = 10V, ID = 7.5A)
    ️· VGS(th) (Gate-Source Threshold Voltage): Typically 2.0V (Maximum 4.0V)
    ️· Input Capacitance: 44 pF
    ️· Output Capacitance: 22 pF
    ️· Gate Charge: 9.8 nC (VGS = 10V)
    ️· Switching Times: These are also listed, including turn-on and turn-off times, but require closer examination of the specific graphs.

    3. Safe Operating Area (SOA) & Avalanche Characteristics:

    ️· Avalanche Energy: The datasheet includes graphs and information about the device's ability to withstand avalanche breakdown (important for inductive circuits). This is limited by junction temperature.
    ️· SOA: The Safe Operating Area graph shows the relationship between drain voltage, drain current, and junction temperature, illustrating the device's limits under stress.

    4. Thermal Characteristics:

    ️· Thermal Resistance: The datasheet provides the junction-to-case thermal resistance (RθJC), which is crucial for determining the device's ability to dissipate heat.
    ️· Effective Transient Thermal Impedance: Provides data and graphs on how quickly the device can respond to changes in heat.

    5. Test Circuit Details & Figures:

    ️· Unclamped Inductive Test Circuit: Details and waveforms for testing the device in a circuit designed to simulate inductive loads (e.g., motor drives).
    ️· Gate Charge Waveform & Test Circuit: Describes the setup for measuring the gate charge parameters.
    ️· Basic Gate Charge Waveform: Depicts the charge/discharge waveforms during gate drive.
    ️· Current Sampling Resistors: Configuration for current measurement during testing.

    6. Figures and Graphs (Brief descriptions - more detail would require visual inspection):

    ️· Typical Characteristics: Numerous graphs show how parameters like RDS(on), gate charge, and switching times vary with temperature, gate voltage, and drain current.
    ️· Safe Operating Area Graph: Shows the limits of voltage and current that the device can handle without exceeding the junction temperature.
    ️· Thermal Resistance vs. Temperature: Shows the change in thermal resistance with increasing temperature.
    ️· Avalanche Energy vs. Drain Current: Depicts the limits of energy the device can absorb in an avalanche condition.
    ️· Package Dimensions: Detailed dimensions for the LCC-18 package.
    ️· Waveforms: Various waveforms related to the inductive test circuit, gate charge measurements, and switching behavior.

    7. Notes and Conditions:

    ️· Several footnotes clarify the conditions under which certain specifications are measured.
    ️· Duty cycle, pulse width, and junction temperature limits are specified for repetitive ratings.

    8. Package Outline - LCC-18:

    ️· Includes a diagram and dimensions of the LCC-18 package, including pinout information.

    9. Contact Information:

    ️· Worldwide headquarters and regional centers contact information (USA, UK, Canada, Germany, Italy, Japan, Southeast Asia, Taiwan).



    IMPORTANT DISCLAIMER:

    ️· This summary is based entirely on interpreting an image of a datasheet. The accuracy is dependent on the clarity and completeness of the image. There may be slight variations in the exact values or specifications due to image distortion or missing details. *Always refer to the official datasheet from International Rectifier (now Infineon) for definitive specifications.*
    ️· I'm not an electrical engineer. This is a summarized interpretation and should not be considered professional engineering advice.
    ️· I cannot guarantee 100% accuracy and have simplified some technical descriptions for clarity.

    To obtain the most accurate information, please visit the Infineon (formerly International Rectifier) website and search for the IRF9130 datasheet.

    1. General Description & Key Features:

    ️· Device Type: N-Channel MOSFET
    ️· Voltage Rating: VDS (Drain-Source Voltage) = 200V
    ️· Current Rating: ID (Continuous Drain Current) = 7.5A (at 25°C)
    ️· Power Dissipation: Pd (Power Dissipation) = 75W (at TA = 100°C)
    ️· Operating Temperature: -40°C to 150°C (junction temperature)
    ️· Package: LCC-18 (See package outline at the end)
    ️· Application: Suitable for a wide range of applications, including switching power supplies, motor control, and DC-DC converters.
    ️· Key Benefit: High voltage and current capability with relatively low on-resistance (RDS(on)).

    2. Electrical Characteristics (Important Values):

    ️· RDS(on) (Drain-Source On-Resistance): Typically 0.45 Ohms (VGS = 10V, ID = 7.5A)
    ️· VGS(th) (Gate-Source Threshold Voltage): Typically 2.0V (Maximum 4.0V)
    ️· Input Capacitance: 44 pF
    ️· Output Capacitance: 22 pF
    ️· Gate Charge: 9.8 nC (VGS = 10V)
    ️· Switching Times: These are also listed, including turn-on and turn-off times, but require closer examination of the specific graphs.

    3. Safe Operating Area (SOA) & Avalanche Characteristics:

    ️· Avalanche Energy: The datasheet includes graphs and information about the device's ability to withstand avalanche breakdown (important for inductive circuits). This is limited by junction temperature.
    ️· SOA: The Safe Operating Area graph shows the relationship between drain voltage, drain current, and junction temperature, illustrating the device's limits under stress.

    4. Thermal Characteristics:

    ️· Thermal Resistance: The datasheet provides the junction-to-case thermal resistance (RθJC), which is crucial for determining the device's ability to dissipate heat.
    ️· Effective Transient Thermal Impedance: Provides data and graphs on how quickly the device can respond to changes in heat.

    5. Test Circuit Details & Figures:

    ️· Unclamped Inductive Test Circuit: Details and waveforms for testing the device in a circuit designed to simulate inductive loads (e.g., motor drives).
    ️· Gate Charge Waveform & Test Circuit: Describes the setup for measuring the gate charge parameters.
    ️· Basic Gate Charge Waveform: Depicts the charge/discharge waveforms during gate drive.
    ️· Current Sampling Resistors: Configuration for current measurement during testing.

    6. Figures and Graphs (Brief descriptions - more detail would require visual inspection):

    ️· Typical Characteristics: Numerous graphs show how parameters like RDS(on), gate charge, and switching times vary with temperature, gate voltage, and drain current.
    ️· Safe Operating Area Graph: Shows the limits of voltage and current that the device can handle without exceeding the junction temperature.
    ️· Thermal Resistance vs. Temperature: Shows the change in thermal resistance with increasing temperature.
    ️· Avalanche Energy vs. Drain Current: Depicts the limits of energy the device can absorb in an avalanche condition.
    ️· Package Dimensions: Detailed dimensions for the LCC-18 package.
    ️· Waveforms: Various waveforms related to the inductive test circuit, gate charge measurements, and switching behavior.

    7. Notes and Conditions:

    ️· Several footnotes clarify the conditions under which certain specifications are measured.
    ️· Duty cycle, pulse width, and junction temperature limits are specified for repetitive ratings.

    8. Package Outline - LCC-18:

    ️· Includes a diagram and dimensions of the LCC-18 package, including pinout information.

    9. Contact Information:

    ️· Worldwide headquarters and regional centers contact information (USA, UK, Canada, Germany, Italy, Japan, Southeast Asia, Taiwan).



    IMPORTANT DISCLAIMER:

    ️· This summary is based entirely on interpreting an image of a datasheet. The accuracy is dependent on the clarity and completeness of the image. There may be slight variations in the exact values or specifications due to image distortion or missing details. *Always refer to the official datasheet from International Rectifier (now Infineon) for definitive specifications.*
    ️· I'm not an electrical engineer. This is a summarized interpretation and should not be considered professional engineering advice.
    ️· I cannot guarantee 100% accuracy and have simplified some technical descriptions for clarity.

    To obtain the most accurate information, please visit the Infineon (formerly International Rectifier) website and search for the IRF9130 datasheet.

    Part No.IRFE9130
    ManufacturerIRF
    Size203 Kbytes
    Pages7 pages
    DescriptionREPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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