| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Toshiba Semiconductor |
2SC5439
|
140Kb/4P
|
Silicon NPN Triple Diffused Type Switching Regulator Applications
|
| Search Partnumber :
Start with "2SC5439_06" -
Total : 29 ( 1/2 Page) |
Quanzhou Jinmei Electro... |
2SC5439
|
206Kb/4P |
Silicon NPN Power Transistors
|
|
2SC5439_2015
|
206Kb/4P |
Silicon NPN Power Transistors
|
NEC |
2SC5431
|
55Kb/8P |
NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX
|
Renesas Technology Corp |
2SC5431
|
214Kb/11P |
NPN SILICON RF TRANSISTOR
2002 |
|
2SC5432
|
314Kb/12P |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
February 2002 |
NEC |
2SC5432
|
59Kb/8P |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
|
Renesas Technology Corp |
2SC5432-T1
|
314Kb/12P |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
February 2002 |
|
2SC5433
|
219Kb/12P |
NPN SILICON RF TRANSISTOR
2002 |
NEC |
2SC5433
|
59Kb/8P |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
|
Renesas Technology Corp |
2SC5433-T1
|
219Kb/12P |
NPN SILICON RF TRANSISTOR
2002 |
NEC |
2SC5434
|
61Kb/8P |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
|
Renesas Technology Corp |
2SC5434
|
224Kb/12P |
NPN SILICON RF TRANSISTOR
2002 |
|
2SC5434-T1
|
224Kb/12P |
NPN SILICON RF TRANSISTOR
2002 |
|
2SC5435
|
222Kb/12P |
NPN SILICON RF TWIN TRANSISTOR
2003 |
|
2SC5435
|
413Kb/35P |
NPN SILICON RF TWIN TRANSISTOR
2002 |
|
2SC5435
|
213Kb/8P |
NPN SILICON + SiGe RF TWIN TRANSISTOR
2005 |
NEC |
2SC5435
|
59Kb/8P |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
|
Renesas Technology Corp |
2SC5435
|
369Kb/38P |
NPN SILICON RF TWIN TRANSISTOR
2001 |
|
2SC5435
|
220Kb/12P |
NPN SILICON RF TRANSISTOR
2002 |
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