Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Hamamatsu Corporation |
P9696
|
109Kb / 2P |
PbSe photoconductive detector
|
P791
|
93Kb / 4P |
PbSe photoconductive detector
|
P791-11
|
174Kb / 4P |
PbSe photoconductive detector
|
P3257
|
242Kb / 7P |
MCT photoconductive detectors
|
P6606
|
822Kb / 5P |
InSb photoconductive detectors
|
P2748
|
226Kb / 4P |
MCT photoconductive detectors
|
P2532-01
|
124Kb / 4P |
Infrared detectors utilizing photoconductive effects
|
VIGO Photonics S.A. |
PCI
|
695Kb / 2P |
1.0 – 12.0 μm HgCdTe ambient temperature, optically immersed photoconductive detectors
08/11/2020 |
PCI-2TE
|
797Kb / 2P |
1.0 – 15.0 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photoconductive detectors
08/11/2020 |
PCI-4TE
|
774Kb / 2P |
1.0 – 16.0 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photoconductive detectors
25/05/2022 |