ARF449A Datasheet(PDF) - Advanced Power Technology

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ARF449A Datasheet (PDF) - Advanced Power Technology

ARF449A Datasheet PDF - Advanced Power Technology


No. de pieza	ARF449A

Descarga	ARF449A Descarga

Tamaño del archivo	52.4 Kbytes

Page	4 Pages

Fabricante Electrónico	ADPOW [Advanced Power Technology]

Página de inicio	http://www.advpowertech.com

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Descripción Electrónicos

N-CHANNEL ENHANCEMENT MODE RF POWER MOSFETs

ARF449A Datasheet (PDF)

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ARF449A Datasheet PDF - Advanced Power Technology


No. de pieza	ARF449A

Descarga	ARF449A Click to download

Tamaño del archivo	52.4 Kbytes

Page	4 Pages

Fabricante Electrónico	ADPOW [Advanced Power Technology]

Página de inicio	http://www.advpowertech.com

Logo

Descripción Electrónicos	N-CHANNEL ENHANCEMENT MODE RF POWER MOSFETs

ARF449A Datasheet (HTML) - Advanced Power Technology

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ARF449A Datasheet HTML 4Page - Advanced Power Technology

ARF449A Detalles de producto

The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.

• Specified 150 Volt, 81.36 MHz Characteristics:
    • Output Power = 90 Watts.
    • Gain = 13dB (Class C)
    • Efficiency = 75%
• Low Cost Common Source RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.

Número de pieza similar - ARF449A

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Advanced Power Technolo...	ARF440	56Kb / 4P	N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
	ARF441	56Kb / 4P	N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
	ARF442	55Kb / 4P	N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
	ARF443	55Kb / 4P	N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
	ARF444	64Kb / 4P	N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET

Descripción similar - ARF449A

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Microsemi Corporation	ARF467FL	247Kb / 4P	RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
Advanced Power Technolo...	ARF464A	102Kb / 4P	RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
Microsemi Corporation	ARF461A	147Kb / 4P	RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
	ARF466A	147Kb / 4P	RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
	ARF466FL	148Kb / 4P	RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
	ARF466FL	138Kb / 4P	RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
Advanced Power Technolo...	APT466FL	186Kb / 4P	N-CHANNEL ENHANCEMENT MODE RF POWER MOSFETs
Microsemi Corporation	ARF446G	87Kb / 4P	RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
IXYS Corporation	IXTT52N30P	146Kb / 6P	N-Channel Enhancement Mode Power MOSFETs
Advanced Power Technolo...	ARF460A	78Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

Acerca de Advanced Power Technology

Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*Esta información es solo para fines informativos generales, no seremos responsables de ninguna pérdida o daño causado por la información anterior.

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