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TC1101V Datasheet (PDF) - Transcom, Inc.

TC1101V Datasheet PDF - Transcom, Inc.
No. de pieza TC1101V
Descarga  TC1101V Descarga

Tamaño del archivo   90.14 Kbytes
Page   2 Pages
Fabricante Electrónico  TRANSCOM [Transcom, Inc.]
Página de inicio  http://www.transcominc.com.tw
Logo TRANSCOM - Transcom, Inc.
Descripción Electrónicos Low Noise and Medium Power GaAs FETs

TC1101V Datasheet (PDF)

Go To PDF Page Descarga Datasheet
TC1101V Datasheet PDF - Transcom, Inc.

No. de pieza TC1101V
Descarga  TC1101V Click to download

Tamaño del archivo   90.14 Kbytes
Page   2 Pages
Fabricante Electrónico  TRANSCOM [Transcom, Inc.]
Página de inicio  http://www.transcominc.com.tw
Logo TRANSCOM - Transcom, Inc.
Descripción Electrónicos Low Noise and Medium Power GaAs FETs

TC1101V Datasheet (HTML) - Transcom, Inc.

TC1101V Datasheet HTML 1Page - Transcom, Inc. TC1101V Datasheet HTML 2Page - Transcom, Inc.

TC1101V Detalles de producto

DESCRIPTION

The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.



FEATURES

Via holes for source grounding

Low Noise Figure: NF = 0.5 dB Typical at 12 GHz

High Associated Gain: Ga = 13 dB Typical at 12 GHz

High Dynamic Range: 1 dB Compression Power P-1 = 18.5 dBm at 12 GHz

Breakdown Voltage: BVDGO ≥ 9 V

Lg = 0.25 µm, Wg = 160 µm

All-Gold Metallization for High Reliability

Tight Vp ranges control

High RF input power handling capability

100 % DC Tested




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