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TC1101 Datasheet (PDF) - Transcom, Inc.

TC1101 Datasheet PDF - Transcom, Inc.
No. de pieza TC1101
Descarga  TC1101 Descarga

Tamaño del archivo   250.32 Kbytes
Page   5 Pages
Fabricante Electrónico  TRANSCOM [Transcom, Inc.]
Página de inicio  http://www.transcominc.com.tw
Logo TRANSCOM - Transcom, Inc.
Descripción Electrónicos Low Noise and Medium Power GaAs FETs

TC1101 Datasheet (PDF)

Go To PDF Page Descarga Datasheet
TC1101 Datasheet PDF - Transcom, Inc.

No. de pieza TC1101
Descarga  TC1101 Click to download

Tamaño del archivo   250.32 Kbytes
Page   5 Pages
Fabricante Electrónico  TRANSCOM [Transcom, Inc.]
Página de inicio  http://www.transcominc.com.tw
Logo TRANSCOM - Transcom, Inc.
Descripción Electrónicos Low Noise and Medium Power GaAs FETs

TC1101 Datasheet (HTML) - Transcom, Inc.

TC1101 Datasheet HTML 1Page - Transcom, Inc. TC1101 Datasheet HTML 2Page - Transcom, Inc. TC1101 Datasheet HTML 3Page - Transcom, Inc. TC1101 Datasheet HTML 4Page - Transcom, Inc. TC1101 Datasheet HTML 5Page - Transcom, Inc.

TC1101 Detalles de producto

DESCRIPTION
The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

FEATURES
● Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
● High Associated Gain: Ga = 12 dB Typical at 12 GHz
● High Dynamic Range: 1 dB Compression Power P-1 = 18.5 dBm at 12 GHz
● Breakdown Voltage: BVDGO ≥ 9 V
● Lg = 0.25 µm, Wg = 160 µm
● All-Gold Metallization for High Reliability
● Tight Vp ranges control
● High RF input power handling capability
● 100 % DC Tested



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