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K4D263238M Datasheet (PDF) - Samsung semiconductor

K4D263238M Datasheet PDF - Samsung semiconductor
No. de pieza K4D263238M
Descarga  K4D263238M Descarga

Tamaño del archivo   281.32 Kbytes
Page   19 Pages
Fabricante Electrónico  SAMSUNG [Samsung semiconductor]
Página de inicio  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Descripción Electrónicos 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

K4D263238M Datasheet (PDF)

Go To PDF Page Descarga Datasheet
K4D263238M Datasheet PDF - Samsung semiconductor

No. de pieza K4D263238M
Descarga  K4D263238M Click to download

Tamaño del archivo   281.32 Kbytes
Page   19 Pages
Fabricante Electrónico  SAMSUNG [Samsung semiconductor]
Página de inicio  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Descripción Electrónicos 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

K4D263238M Datasheet (HTML) - Samsung semiconductor

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K4D263238M Detalles de producto

GENERAL DESCRIPTION
FOR 1M x 32Bit x 4 Bank DDR SDRAM
The K4D263238 is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 1.8GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.

FEATURES
• 2.5V ± 5% power supply
• SSTL_2 compatible inputs/outputs
• 4 banks operation
• MRS cycle with address key programs
    -. Read latency 3,4 (clock)
    -. Burst length (2, 4, 8 and Full page)
    -. Burst type (sequential & interleave)
• Full page burst length for sequential burst type only
• Start address of the full page burst should be even
• All inputs except data & DM are sampled at the positive going edge of the system clock
• Differential clock input
• No Write Interrupted by Read function
• Data I/O transactions on both edges of Data strobe
• DLL aligns DQ and DQS transitions with Clock transition
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• DM for write masking only
• Auto & Self refresh
• 32ms refresh period (4K cycle)
• 100pin TQFP package
• Maximum clock frequency up to 222MHz
• Maximum data rate up to 444Mbps/pin




Número de pieza similar - K4D263238M

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Descripción similar - K4D263238M

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