| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
NXP Semiconductors |
PBRN123E
|
159Kb / 17P |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k?
Rev. 01-27 February 2007 |
|
PBRN113Z
|
162Kb / 17P |
NPN 800 mA, 40 V BISS RETs; R1 = 1 k?? R2 = 10 k?
Rev. 01-26 February 2007 |
|
PBRN113E
|
159Kb / 17P |
NPN 800 mA, 40 V BISS RETs; R1 = 1 k?? R2 = 1 k?
Rev. 01-1 March 2007 |
Nexperia B.V. All right... |
PBRN123E_SER
|
740Kb / 17P |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW
Rev. 01 - 27 February 2007 |
|
PBRN123Y_SER
|
741Kb / 17P |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW
Rev. 01 - 27 February 2007 |
|
PBRN113Z_SER
|
741Kb / 17P |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW
Rev. 01 - 26 February 2007 |
|
PBRN113E_SER
|
777Kb / 17P |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW
Rev. 01 - 1 March 2007 |
NXP Semiconductors |
PBRP123YT
|
121Kb / 12P |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 10 kW
Rev. 01-17 December 2007 |
|
PBRP123ET
|
112Kb / 12P |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 2.2 kW
Rev. 01-16 January 2008 |
|
PDTD123Y
|
132Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 02-16 November 2009 |
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