Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Microsemi Corporation |
3134-200P
|
83Kb / 2P |
200 Watts - 100關s, 10%, 36V S-Band Pulsed Radar 3100 - 3400 MHz
|
3134-180P
|
83Kb / 2P |
180 Watts - 100關s, 10%, 36V S-Band Pulsed Radar 3100 - 3400 MHz
|
2729-300P
|
358Kb / 2P |
300 Watts - 100關s, 10%, 36V S-Band Pulsed Radar 2700 - 2900 MHz
|
3135GN-280LV
|
145Kb / 4P |
280 Watts • 50 Volts • 200 s, 20% S-Band Radar 3100 - 3500 MHz
Revision 1.0 |
HVVi Semiconductors, In... |
HVV1214-025S
|
225Kb / 2P |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200關s Pulse, 10% Duty
|
Microsemi Corporation |
3134-100M
|
85Kb / 4P |
100 Watts, 36 Volts, 100關s, 10% Radar 3100-3400 MHz
|
3134-100
|
303Kb / 5P |
100 Watts, 36 Volts, 100關s, 10% Radar 3100-3400 MHz
|
2731-100M
|
298Kb / 5P |
100 Watts, 36 Volts, 200us, 10% Radar 2700-3100 MHz
|
1214-800P
|
83Kb / 2P |
800 Watts - 300關s, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
|
1214-550P
|
84Kb / 2P |
550 Watts - 300關s, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
|