Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Toshiba Semiconductor |
GT35J321
|
290Kb / 6P |
Fourth-generation IGBT Current Resonance Inverter Switching Applications
|
GT50J328
|
232Kb / 6P |
Current Resonance Inverter Switching Application Fourth Generation IGBT
|
MG200Q2YS65H
|
158Kb / 6P |
IGBT Module Silicon N Channel IGBT
|
Hitachi Semiconductor |
2SH15
|
43Kb / 8P |
Silicon N-Channel IGBT
|
2SH22
|
42Kb / 8P |
Silicon N-Channel IGBT
|
MBN400C33A
|
56Kb / 4P |
Silicon N-channel IGBT
|
2SH12
|
43Kb / 8P |
Silicon N-Channel IGBT
|
2SH17
|
41Kb / 8P |
Silicon N-Channel IGBT
|
Toshiba Semiconductor |
MIG75J101H
|
198Kb / 8P |
Silicon N Channel IGBT
|
Hitachi Semiconductor |
2SH16
|
42Kb / 8P |
Silicon N-Channel IGBT
|