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BULD85KC Datasheet (PDF) - Power Innovations Ltd

BULD85KC Datasheet PDF - Power Innovations Ltd
No. de pieza BULD85KC
Descarga  BULD85KC Descarga

Tamaño del archivo   166.15 Kbytes
Page   8 Pages
Fabricante Electrónico  POINN [Power Innovations Ltd]
Página de inicio  http://www.bourns.com
Logo POINN - Power Innovations Ltd
Descripción Electrónicos NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

BULD85KC Datasheet (PDF)

Go To PDF Page Descarga Datasheet
BULD85KC Datasheet PDF - Power Innovations Ltd

No. de pieza BULD85KC
Descarga  BULD85KC Click to download

Tamaño del archivo   166.15 Kbytes
Page   8 Pages
Fabricante Electrónico  POINN [Power Innovations Ltd]
Página de inicio  http://www.bourns.com
Logo POINN - Power Innovations Ltd
Descripción Electrónicos NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

BULD85KC Datasheet (HTML) - Power Innovations Ltd

BULD85KC Datasheet HTML 1Page - Power Innovations Ltd BULD85KC Datasheet HTML 2Page - Power Innovations Ltd BULD85KC Datasheet HTML 3Page - Power Innovations Ltd BULD85KC Datasheet HTML 4Page - Power Innovations Ltd BULD85KC Datasheet HTML 5Page - Power Innovations Ltd BULD85KC Datasheet HTML 6Page - Power Innovations Ltd BULD85KC Datasheet HTML 7Page - Power Innovations Ltd BULD85KC Datasheet HTML 8Page - Power Innovations Ltd

BULD85KC Detalles de producto

description

The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated transistor and anti-parallel diode.



● Designed Specifically for High Frequency Electronic Ballasts

● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability

● Diode trr Typically 1 µs

● Tightly Controlled Transistor Storage Times

● Voltage Matched Integrated Transistor and Diode

● Characteristics Optimised for Cool Running

● Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability



 




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