Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
ZP Semiconductor |
PMV30UN
|
200Kb / 3P |
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS??technology.
|
NXP Semiconductors |
2N7002F215
|
100Kb / 12P |
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
Rev. 03-28 April 2006 |
PHB191NQ06LT
|
91Kb / 13P |
Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology
Rev. 01-05 May 2004 |
PH1955L
|
77Kb / 12P |
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
Rev. 01-15 August 2005 |
PSMN005-75P
|
271Kb / 13P |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology.
Rev. 01-26 April 2002 |
SHIKUES Electronics |
SKCS120N03ZB
|
1Mb / 6P |
N-Channel Enhancement Mode Field Effect Transistor in a DFN 3*3A-8L Plastic Package.
|
SDW3045
|
1,003Kb / 5P |
N-Channel enhancement mode power field effect transistors are using trench DMOS technology
|
NXP Semiconductors |
BUK9006-55A
|
226Kb / 10P |
N-channel Enhancement mode field-effect power Transistor
Rev. 01-1 August 2003 |
New Jersey Semi-Conduct... |
NDP606A
|
121Kb / 3P |
N-Channel Enhancement Mode Power Field Effect Transistor
|
NXP Semiconductors |
PSMN006-20K518
|
261Kb / 12P |
Very low on-state resistance
Rev. 01-30 May 2002 |